Package with dielectric or anisotropic conductive (acf) buildup layer

ABSTRACT

Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having one or more dies connected to an integrated circuit substrate by an interface layer. In one embodiment, the interface layer may include an anisotropic portion configured to conduct electrical signals in the out-of-plane direction between one or more components, such as a die and an integrated circuit substrate. In another embodiment, the interface layer may be a dielectric or electrically insulating layer. In yet another embodiment, the interface layer may include an anisotropic portion that serves as an interconnect between two components, a dielectric or insulating portion, and one or more interconnect structures that are surrounded by the dielectric or insulating portion and serve as interconnects between the same or other components. Other embodiments may be described and/or claimed.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.13/719,836, entitled “PACKAGE WITH DIELECTRIC OR ANISOTROPIC CONDUCTIVE(ACF) BUILDUP LAYER,” filed on Dec. 19, 2012, and claims priority to theSer. No. 13/719,836 application. The entire disclosure of the Ser. No.13/719,836 application is incorporated herein by reference.

FIELD

Embodiments of the present disclosure generally relate to the field ofintegrated circuits, and more particularly, to techniques andconfigurations for an integrated circuit (IC) package with accuratecomponent-to-component alignment.

BACKGROUND

Wafer Level Ball Grid Array (WLB) technology has been used to buildintegrated circuit packages on silicon wafers. In WLB packages, theinterconnects are in a fan-in arrangement. In contrast, Embedded WaferLevel Ball Grid Array (eWLB) technology is used to build packages on anartificial wafer made from singulated chips and a casting compound.Typically, the die is mounted face down on a support by a pick and place(PnP) tool, over-molded, and cured. The support is then removed andinterconnects are built on the exposed face of the die in a fan-outarrangement.

The fan-out arrangement provides more space for interconnect routingthan in traditional WLB packages. However, current eWLB technology hasseveral drawbacks. First, the pick and place (PnP) tools used to placethe components are expensive and have a limited throughput capacity, andnot all components need the same placement accuracy. In addition, thecomponents can shift during the molding and curing process. Highdensity/high bandwidth routing is not viable due to poor die (component)to die (component) alignment accuracy. Next, the placement of dies orother components onto die attach film (DAF) on the support by PnP toolscan leave voids trapped under the die or component. Finally, theinterconnects are made with either laser drilled vias or photo definedvias, which can be suboptimal in cost or performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements. Embodiments are illustrated by way of example and not by wayof limitation in the figures of the accompanying drawings.

FIG. 1 schematically illustrates a cross-section view of an exampleintegrated circuit (IC) package assembly, in accordance with someembodiments.

FIG. 2 schematically illustrates a cross-section view of another exampleIC package assembly, in accordance with some embodiments.

FIG. 3 schematically illustrates a cross-section view of an example ICpackage assembly coupled to a circuit board, in accordance with someembodiments.

FIG. 4 is a flow diagram for a method of fabricating an IC packageassembly, in accordance with some embodiments.

FIGS. 5-13 schematically illustrate an IC package assembly during orsubsequent to various fabrication operations.

FIG. 5 schematically illustrates a cross-section view of dies positionedon a support for use in fabrication of an example IC package assembly,in accordance with some embodiments.

FIG. 6 schematically illustrates a cross-section view of an examplesupport and interface layer for use in fabrication of an IC packageassembly, in accordance with some embodiments.

FIG. 7 schematically illustrates a cross-section view of components ofan example IC package assembly subsequent to placing an interface layerover one or more dies, in accordance with some embodiments.

FIG. 8 schematically illustrates a cross-section view of dies andinterface layer compressed between supports subsequent to placing aninterface layer over one or more dies, in accordance with someembodiments.

FIG. 9 schematically illustrates an example IC package assemblysubsequent to removal of a support from components of the IC packageassembly, in accordance with some embodiments.

FIG. 10 schematically illustrates an example IC package assemblysubsequent to addition of an electronic component, in accordance withsome embodiments.

FIG. 11 schematically illustrates an example IC package assemblysubsequent to addition of a molding material, in accordance with someembodiments.

FIG. 12 schematically illustrates an example IC package assemblysubsequent to removal of a support, in accordance with some embodiments.

FIG. 13 schematically illustrates an example IC package assemblysubsequent to planing of the interface layer, in accordance with someembodiments.

FIG. 14 schematically illustrates a computing device in accordance withone implementation of the invention.

DETAILED DESCRIPTION

Embodiments of the present disclosure describe techniques andconfigurations for an integrated circuit (IC) package with accuratecomponent-to-component alignment. In the following description, variousaspects of the illustrative implementations will be described usingterms commonly employed by those skilled in the art to convey thesubstance of their work to others skilled in the art. However, it willbe apparent to those skilled in the art that the present invention maybe practiced with only some of the described aspects. For purposes ofexplanation, specific numbers, materials and configurations are setforth in order to provide a thorough understanding of the illustrativeimplementations. However, it will be apparent to one skilled in the artthat the present invention may be practiced without the specificdetails. In other instances, well-known features are omitted orsimplified in order not to obscure the illustrative implementations.

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, wherein like numeralsdesignate like parts throughout, and in which is shown by way ofillustration embodiments in which the subject matter of the presentdisclosure may be practiced. It is to be understood that otherembodiments may be utilized and structural or logical changes may bemade without departing from the scope of the present disclosure.Therefore, the following detailed description is not to be taken in alimiting sense, and the scope of embodiments is defined by the appendedclaims and their equivalents.

For the purposes of the present disclosure, the phrase “A and/or B”means (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

The description may use perspective-based descriptions such astop/bottom, in/out, over/under, and the like. Such descriptions aremerely used to facilitate the discussion and are not intended torestrict the application of embodiments described herein to anyparticular orientation.

The description may use the phrases “in an embodiment,” or “inembodiments,” which may each refer to one or more of the same ordifferent embodiments. Furthermore, the terms “comprising,” “including,”“having,” and the like, as used with respect to embodiments of thepresent disclosure, are synonymous.

The term “coupled with,” along with its derivatives, may be used herein.“Coupled” may mean one or more of the following. “Coupled” may mean thattwo or more elements are in direct physical or electrical contact.However, “coupled” may also mean that two or more elements indirectlycontact each other, but yet still cooperate or interact with each other,and may mean that one or more other elements are coupled or connectedbetween the elements that are said to be coupled with each other. Theterm “directly coupled” may mean that two or elements are in directcontact.

In various embodiments, the phrase “interface layer” may mean acontinuous or discontinuous layer that is formed, deposited, or disposedbetween a die and an integrated circuit substrate. The interface layer,or some portion thereof, may be in direct contact (e.g., direct physicaland/or electrical contact) or indirect contact (e.g., separated by oneor more other layers) with one or more of the die(s) and the integratedcircuit substrate.

Embodiments of the present disclosure describe techniques andconfigurations for an integrated circuit (IC) package. In someembodiments, an IC package may include one or more dies connected to anintegrated circuit substrate by an interface layer. In some embodiments,the interface layer may include an anisotropic portion configured toconduct electrical signals in the out-of-plane direction, relative to aplane formed/defined by the interface layer, between one or morecomponents (e.g., between the die(s) and the integrated circuitsubstrate). For example, the interface layer may be a full/continuousanisotropic interface layer that serves as an interconnect between oneor more dies and an integrated circuit substrate. Alternatively, theinterface layer may be a dielectric or insulating layer. As anotheralternative, the interface layer may include an anisotropic portion, adielectric or insulating portion, and one or more interconnectstructures surrounded by the dielectric or insulating portion. Theanisotropic portion may serve as an interconnect between a die/componentand an integrated circuit substrate, and the dielectric or insulatingportion may serve as an interconnect between the same or different dieand the integrated circuit substrate. Principles described herein withregard to the interface layer are not limited to these examples and maybe applied to other types of substrates (e.g., a circuit board) in otherembodiments.

FIG. 1 schematically illustrates an example integrated circuit (IC)package assembly 100, in accordance with some embodiments. The ICpackage assembly 100 may include one or more dies (hereinafter “die102”) coupled with an integrated circuit substrate 122 by an interfacelayer 112. In some embodiments, one or more die interconnect structures(hereinafter “interconnect structures 106” may also connect the die(s)102 to the integrated circuit substrate 122. In various embodiments, thedie 102 and the integrated circuit substrate 122 may each be referred toas an “IC substrate.”

The die(s) 102 may include a substrate composed of a semiconductormaterial upon which electrical devices such as, for example, transistorsand associated circuitry are formed. The active side of a die 102 mayhave one or more transistor devices formed thereon. In some embodiments,a die 102 may represent a discrete chip and may be, include, or be apart of, a processor, memory, or ASIC.

The integrated circuit substrate 122 may include a laminate substratecomposed of a polymer such as epoxy upon which traces or other circuitrymay be formed. In some embodiments, the integrated circuit substrate 122is an epoxy-based laminate substrate having a core and/or one or morebuild-up (BU) layers such as, for example, an Ajinomoto Build-up Film(ABF) substrate. The integrated circuit substrate 122 may include othersuitable types of substrates in other embodiments including, forexample, substrates formed from glass, ceramic, or semiconductormaterials. In some embodiments, the integrated circuit substrate 122 maybe an interposer. The die 102 and the integrated circuit substrate 122are not limited to these example materials and may include othersuitable well-known materials in other embodiments.

The interface layer 112 may be an anisotropic layer, a dielectric orelectrically insulating layer, or a layer with one or more anisotropicportions and one or more dielectric portions. In some embodiments, theinterface layer 112 may have a thickness in the range of 5-30 μm (e.g.,5-25 μm, 6-20 μm, 7-15 μm). A first surface or side (e.g., an activeside) of the die(s) 102 may be attached to one side of the interfacelayer 112, and the integrated circuit substrate 122 may be attached toan opposite second side of the interface layer 112.

In some embodiments, the die(s) 102 may be connected to the integratedcircuit substrate 122 by one or more interconnect structures 106 such asbumps, pillars, or other suitable structures. In some embodiments, theinterconnect structures 106 may be configured to route electricalsignals to or from the die 102. The electrical signals may include, forexample, input/output (I/O) signals and/or power or ground signalsassociated with the operation of the die 102. In some embodiments,interconnect structures 106 can include solderable material (e.g.,solder bumps) connected to bond pads on the active side of the die 102.In some embodiments, the interconnect structures 106 may be configuredas an array of bumps.

The integrated circuit substrate 122 may include interconnect elements118 configured to route electrical signals to or from the die 102. Theinterconnect elements 118 may include, for example, traces (not shown)disposed on one or more surfaces of the integrated circuit substrate 122and/or internal structures such as, for example, trenches, vias or otherinterconnect structures to route electrical signals through theintegrated circuit substrate 122. For example, in some embodiments, theinterconnect elements 118 may be, or may include, structures configuredto receive the die interconnect structures 106 and route electricalsignals between the die 102 and the integrated circuit substrate 122.The interconnect structures 106 or portion thereof (e.g., solderablematerial) can be connected to corresponding interconnect elements 118(e.g., die bond pads) on the integrated circuit substrate 122 to form anelectrically conductive bond between the die 102 and the integratedcircuit substrate 122.

The integrated circuit substrate 122 may be configured to electricallycouple with another external component (e.g., a circuit board such ascircuit board 130 of FIG. 3 and/or motherboard 1402 of FIG. 14) usingone or more package interconnect structures (hereinafter “interconnectstructures 124”). The interconnect structures 124 may include, forexample, solderable material (e.g., solder balls) coupled tointerconnect elements 118. The interconnect structures 124 may beconfigured to route the electrical signals (e.g., I/O and/or power) toor from the integrated circuit substrate 122. The interconnectstructures 124 may be arranged in a ball-grid array (BGA) configurationin some embodiments.

The interconnect structures 106, 124 and interconnect elements 118 maybe composed of any of a wide variety of electrically conductivematerials including metals such as, for example, gold, copper, aluminum,silver, tin, palladium, or nickel. The interconnect structures 106, 124and/or interconnect elements 118 may include other suitable structuresor configurations than depicted in other embodiments such as, forexample, posts or other well-known structures or configurations.

In some embodiments, the intermediate layer 112 may substantially fill agap between the die 102 and the integrated circuit substrate 122 andgaps between the interconnect structures 106, as can be seen for examplein FIG. 3. Alternatively, the intermediate layer 112 may partially filla gap between the die 102 and the integrated circuit substrate 122and/or gaps between the interconnect structures 106, and the remainderof the gap may be filled by an underfill material, a layer ofdielectric/anisotropic film, or another material. In some embodiments,underfill material used to fill the remainder of the gap may be composedof a polymer such as, for example, an acrylic-based or epoxy-basedmaterial such as resin materials.

In some embodiments, as shown for example in FIG. 1, intermediate layer112 may include a dielectric film. In other embodiments, as shown forexample in FIG. 2, intermediate layer 112 may include an anisotropicfilm. In some embodiments, intermediate layer 112 may include adielectric portion and an anisotropic portion, with the anisotropicportion serving as the interconnect between some components and theinterconnect structures 106 serving as the interconnect between othercomponents. The anisotropic film or anisotropic portion may beconfigured to conduct electrical signals in an out-of-plane direction,relative to a plane formed by the interface layer, between the die andthe integrated circuit substrate.

FIG. 3 schematically illustrates a cross-section view of an example ICpackage assembly coupled to a circuit board, in accordance with someembodiments. In some embodiments, the circuit board 130 may be a printedcircuit board (PCB) composed of an electrically insulating material suchas an epoxy laminate. For example, the circuit board 130 may includeelectrically insulating layers composed of materials such as, forexample, polytetrafluoroethylene, phenolic cotton paper materials suchas Flame Retardant 4 (FR-4), FR-1, cotton paper and epoxy materials suchas CEM-1 or CEM-3, or woven glass materials that are laminated togetherusing an epoxy resin prepreg material. Structures (not shown) such astraces, trenches, vias may be formed through the electrically insulatinglayers to route the electrical signals of the die(s) 102 through thecircuit board 130. The circuit board 130 may be composed of othersuitable materials in other embodiments.

Only a portion of the circuit board 130 may be depicted in FIG. 3. Thecircuit board 130 may include other electrical devices coupled to thecircuit board that are configured to route electrical signals to or fromthe die(s) 102 through the circuit board 130. The circuit board 130 maybe a motherboard (e.g., motherboard 1402 of FIG. 14) in someembodiments.

FIG. 4 is a flow diagram for a method of fabricating an IC packageassembly (e.g., IC package assembly 100 of FIG. 1 or FIG. 2), inaccordance with some embodiments. The method 400 may comport withembodiments described in connection with FIGS. 1-3 and 5-14.

At 402, the method 400 may include forming interconnect structures(e.g., interconnect structures 106) on a first surface of one or moredies. Other embodiments, as shown for example in FIG. 2, may lack 402.For example, 402 may be omitted in embodiments that include ananisotropic film as the interface layer 112.

At 404, the method 400 may include positioning the one or more dies(e.g., dies 102) on a first support (e.g., support 104). As shown inFIG. 5, the die(s) 102 may be positioned ‘face up’ on the first supportsuch that an active first surface or side of the die with interconnectstructures 106, if any, are exposed, and an opposite second surface orside of the die is in contact with the support 104. In some embodiments,support 104 may have a layer of bonding/adhesive material onto whichdie(s) 104 are placed in a desired position and retained. In someembodiments, a chucking system (e.g., vacuum or electrostatic) may beused to position the die(s) 102 on the support 104. For example, thesupport 104 may be made of a porous material, and a vacuum may beapplied to retain the die(s) 102 in the desired positions on the support104. The opposite second surface(s) of the die(s) 102 may be polishedbefore positioning the die(s) 102 on the first support 104.

At 406, the method 400 may further include placing an interface layeronto the first surface of the die(s) 102. As shown for example in FIG.6, the interface layer 112 may be coupled to a second support 120. Insome embodiments, the interface layer 112 may be, or may include, adie-attach-film (DAF). In some embodiments, the interface layer 112 mayinclude a dielectric film, an anisotropic film, or a film with adielectric portion and an anisotropic portion, and/or an adhesive (e.g.,a thermoplastic adhesive, an epoxy, a resin). The interface layer 112may be a continuous layer (see e.g., FIG. 2) or a discontinuous layer(see e.g., FIG. 1). In some embodiments, the interface layer 112 may beapplied to the second support 120 as a continuous film layer andsubsequently processed to become a discontinuous layer (e.g., by laser,etching, and/or planarizing the interface layer).

In some embodiments, an intermediate layer 114 may be disposed betweenthe second support 120 and the interface layer 112. Intermediate layer114 may be configured to release the interface layer 112 from the secondsupport 120 in response to a particular condition. In some embodiments,intermediate layer 114 may be, or may include, a material thatdissolves, disintegrates, degrades, and/or becomes liquid or semi-solidupon exposure to a particular condition (e.g., light, heat, a chemical,a change in pH, a solvent). In some embodiments, the intermediate layer114 may include one or more polymers (e.g., a supramolecular polymer, adendritic polymer, a hyperbranched polymer, a copolymer). In someembodiments, the intermediate layer 114 may include a dendritic orhyperbranched polymer that softens, becomes a low-viscosity liquid,sublimates, or vaporizes at a predetermined temperature. In someembodiments, the intermediate layer 114 may be dissolvable in a polar ornon-polar solvent. Other embodiments may lack an intermediate layer 114.In those embodiments, the interface layer 112 may be coupled to thesecond support 120 by vacuum pressure, electrostatic force, or by otherknown methods.

The interface layer 112 and/or the intermediate layer 114 may be appliedto a surface of the second support 120 by known methods (e.g., heat,compression). In some embodiments, the interface layer 112 and/or theintermediate layer 114 may be deposited selectively/discontinuously toform a discontinuous layer. In some embodiments, the intermediate layer114 may be applied to the second support 120 by spraying, spin-coating,laminating, or other known methods, and the interface layer 112 may besubsequently applied to the intermediate layer 114 in a separateprocess. In other embodiments, the interface layer 112 and theintermediate layer 114 may be applied to the second support 120 in asingle process. For example, the intermediate layer 114 may be formed onthe interface layer 112 before applying the intermediate layer 114 andthe interface layer 112 to the second support 120.

In some embodiments, a substance that expands in response to an increasein temperature may be provided within intermediate layer 114 or betweenintermediate layer 114 and an adjacent structure (e.g., interface layer112, second support 120, a handling layer). For example, intermediatelayer 114 may be deposited around the periphery of a surface of secondsupport 120, and the interface layer 112 may be coupled to theintermediate layer 114, leaving an air pocket between the surface of thesecond support 120 and the interface layer 112. Applying heat to theintermediate layer 114 may cause the air pocket to expand, resulting inthe separation of the second support 120 from the interface layer 112.

At 408, the method 400 may further include compressing the one or moredies and the interface layer between the first support and the secondsupport. As shown for example in FIGS. 7 and 8, the dies 102 and theinterface layer 112 may be positioned between the first support 104 andthe second support 120. Force may be applied to one or both of supports104/120 to compress the dies 102 and the interface layer 112 together.In some embodiments, force may be applied in an upward direction to thebottom of the first support 104 and/or in a downward direction to thetop of the second support 120. In some embodiments, the compression maybe done in a pressure-controlled chamber (e.g., an autoclave or othertype of batch oven), and may include increasing or decreasing thepressure within the chamber (e.g., within a range of a low vacuumpressure of 0.01 atm or less to a high pressure of around 10 atm).

At 410, the method 400 may include curing the interface layer. Curingthe interface layer may include applying heat during or after thecompression of the dies 102 and the interface layer 112 between thefirst and second supports 104/120. For example, the components may beheated (during or after the compression) in a chamber at a predeterminedtemperature or range of temperatures (e.g., 80-200° C., 100-180° C.,150-170° C., 170-230° C.). The duration of heating may vary amongembodiments (e.g., from 100 seconds to several hours, depending on thematerial choices). The pressure from the supports 104/120 and/or withinthe chamber may reduce or prevent shifting of the die(s) 102 from thedesired position(s) on the first support 104 during thecompression/heating. Applying heat to the components may reduce oreliminate voids between the dies(s) 102 and the interface layer 112. Insome embodiments, the interface layer 112 may have sufficient volume tofill the spaces between the die(s) 102, and/or between the die(s) 102and other components (e.g., the integrated circuit substrate 122).Alternatively, one or more other materials (e.g., underfill material,molding material, DAF film, etc.) may be used to fill a remaining space

At 412, the method 400 may further include uncoupling the first supportfrom the one or more dies (see e.g., FIG. 9). In some embodiments,uncoupling the first support 104 from the one or more dies may includelifting the second support 120 and components coupled thereto (e.g.,interface layer 112, dies 102) away from the first support 104, or viceversa. In some embodiments, the first support 104 may be coupled to thedie(s) 102 by negative/vacuum pressure until positive pressure isapplied during/after the compressing/curing of the interface layer 112.The release of the negative/vacuum pressure may allow the first support104 to be removed from the die(s) 102. In other embodiments, a bondinglayer or adhesive disposed between the surface of the first support 104and the opposite second side(s) of the die(s) 102 may be removed byheating, light, a laser, a solvent, or mechanical force to remove thefirst support 104 from the die(s) 102.

At 414, the method 400 may include coupling an electronic component 116to the interface layer 112. As shown for example in FIG. 10, the secondsupport 120 may be rotated or inverted to position the die(s) 102 abovethe second support 120. One or more electronic components 116 (e.g., aclock, a crystal, a capacitor) may be positioned on the interface layer112. For example, a component that does not require high placementaccuracy may be placed onto the interface layer 112 by a pick-and-place(PnP) tool (e.g., a chip shooter) or by other known methods/devices.

At 416, the method 400 may further include applying a molding materialto the opposite second surface of the one or more die(s). The moldingmaterial (e.g., molding material 126) may include, for example, epoxymaterials or other suitable materials to electrically insulateelectrical features of the IC package assembly 100. In the depictedembodiment, the molding material 126 serves as an encapsulant forexposed surface(s) of the die(s) 102. As shown in FIG. 11, the moldingmaterial 126 may partially or fully encapsulate the opposite second sideof the die(s) 102.

At 418, the method 400 may further include removing the second supportfrom the interface layer. As described above, the intermediate layer 114may be configured to release the interface layer 112 from the secondsupport 120 in response to a particular condition. Thus, removing thesecond support 120 from the interface layer 112 may include applyinglight, heat, a chemical, a change in pH, a solvent, and/or mechanicalforce to the intermediate layer 114 and/or one or more componentsattached to the second support 120. In response, the intermediate layer114 may dissolve, degrade/deteriorate, soften, becomes a low-viscosityliquid, sublimate, or vaporize to release the second support 120 fromthe interface layer 112. In some embodiments that lack an intermediatelayer 114, removing the second support may include releasing negativepressure, applying mechanical force, or neutralizing an electrostaticforce. FIG. 12 schematically illustrates an example IC package assemblysubsequent to removal of the second support 120, in accordance with someembodiments.

At 420, the method 400 may include planarizing the interface layer toexpose the interconnect element(s) on the die(s). As shown for examplein FIG. 13, the components may be flipped or inverted as a unit toposition the interface layer 112 above the molding material 126. Theinterface layer 112 may be planarized to the extent necessary to exposethe interconnect elements 106 on the die(s) 102. In some embodiments,the interface layer may be planarized to a depth required to remove aportion of the interconnect elements 106 and/or a coating or othersurface treatment on the interconnect elements 106 (e.g., a protectivecoating).

Some embodiments may lack 420. For example, in some embodiments theinterface layer 112 is an anisotropic layer that conducts signals in anout-of-plane direction relative to the plane of the interface layer, andinterconnect elements 106 are omitted. In other embodiments, theinterconnect elements 106 may be exposed as a result of the curing(e.g., due to melting and flow of the interface layer 112 upon heating).

At 422, the method 400 may include coupling an integrated circuitsubstrate 122 with the interface layer 112. As described above, theintegrated circuit substrate 122 may include one or more interconnectelements 118 (e.g., bond pads). In some embodiments, the die(s) 102 maylack interconnect structures 106, and coupling the integrated circuitsubstrate 122 to the interface layer 112 may include placing theinterface layer 112 against the integrated circuit substrate 122 andapplying heat and/or pressure to those components. For example, pressuremay be applied to the molding material 126 and/or to the integratedcircuit substrate 122 to compress the integrated circuit substrate 122against the interface layer 112. As another example, heat may be appliedto the components (e.g., in an autoclave or other type of oven) to bondthe integrated circuit substrate 122 to the interface layer 112.Alternatively, both heat and pressure may be applied simultaneously orasynchronously.

In other embodiments, interconnect structures 106 may be exposed alongthe surface of the interface layer 112, and coupling the integratedcircuit substrate 122 to the interface layer 112 may include aligningthe interconnect structures 106 with the interconnect elements 118 andheating the IC package to soften or melt the interconnect structures106. This may cause the interconnect structures 106 to bond to theinterconnect elements 118. In some embodiments, pressure may be appliedto compress the interconnect structures 106 and interface layer 112against the integrated circuit substrate 122 during and/or subsequent toheating the IC package.

In some embodiments, method 400 may further include forming one or morevias in the interface layer 112. For example, in some embodiments theinterface layer 112 may include a dielectric portion disposed over anelectronic component or portion of a die 102. A via may be formed in thedielectric portion by known methods (e.g., laser) to connect thecomponent or portion of the die to the integrated circuit substrate 122.Alternatively, vias may be omitted in some embodiments. For example,vias may be omitted in embodiments with an interface layer 112 that isanisotropic and/or has anisotropic portions connecting eachdie/electronic component to the integrated circuit substrate.

In some embodiments, method 400 may further include coupling a circuitboard to the IC package assembly. As shown for example in FIG. 3, acircuit board (e.g., circuit board 130) may be coupled to the integratedcircuit substrate 122. In some embodiments, coupling the circuit board130 to the IC package assembly (e.g., IC package assembly 100) mayinclude coupling interconnect structures 124 (e.g., solder balls) to theinterconnect elements 118 of the integrated circuit substrate 122 and tocorresponding interconnect elements 132 (e.g., bond pads) of the circuitboard 130 to form corresponding solder joints that are configured tofurther route the electrical signals of the die(s) 102 to the circuitboard 130.

Various operations are described as multiple discrete operations inturn, in a manner that is most helpful in understanding the claimedsubject matter. However, the order of description should not beconstrued as to imply that these operations are necessarily orderdependent. Embodiments of the present disclosure may be implemented intoa system using any suitable hardware and/or software to configure asdesired. FIG. 14 schematically illustrates a computing device 1400 inaccordance with one implementation of the invention. The computingdevice 1400 may house a board such as motherboard 1402. The motherboard1402 may include a number of components, including but not limited to aprocessor 1404 and at least one communication chip 1406. The processor1404 may be physically and electrically coupled to the motherboard 1402.In some implementations, the at least one communication chip 1406 mayalso be physically and electrically coupled to the motherboard 1402. Infurther implementations, the communication chip 1406 may be part of theprocessor 1404.

Depending on its applications, computing device 1400 may include othercomponents that may or may not be physically and electrically coupled tothe motherboard 1402. These other components may include, but are notlimited to, volatile memory (e.g., DRAM), non-volatile memory (e.g.,ROM), flash memory, a graphics processor, a digital signal processor, acrypto processor, a chipset, an antenna, a display, a touchscreendisplay, a touchscreen controller, a battery, an audio codec, a videocodec, a power amplifier, a global positioning system (GPS) device, acompass, an accelerometer, a gyroscope, a speaker, a camera, and a massstorage device (such as hard disk drive, compact disk (CD), digitalversatile disk (DVD), and so forth).

The communication chip 1406 may enable wireless communications for thetransfer of data to and from the computing device 1400. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 1406 may implementany of a number of wireless standards or protocols, including but notlimited to Institute for Electrical and Electronic Engineers (IEEE)standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards(e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) projectalong with any amendments, updates, and/or revisions (e.g., advanced LTEproject, ultra mobile broadband (UMB) project (also referred to as“3GPP2”), etc.). IEEE 802.16 compatible BWA networks are generallyreferred to as WiMAX networks, an acronym that stands for WorldwideInteroperability for Microwave Access, which is a certification mark forproducts that pass conformity and interoperability tests for the IEEE802.16 standards. The communication chip 1406 may operate in accordancewith a Global System for Mobile Communication (GSM), General PacketRadio Service (GPRS), Universal Mobile Telecommunications System (UMTS),High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network.The communication chip 1406 may operate in accordance with Enhanced Datafor GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN),Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN(E-UTRAN). The communication chip 1406 may operate in accordance withCode Division Multiple Access (CDMA), Time Division Multiple Access(TDMA), Digital Enhanced Cordless Telecommunications (DECT),Evolution-Data Optimized (EV-DO), derivatives thereof, as well as anyother wireless protocols that are designated as 3G, 4G, 5G, and beyond.The communication chip 1406 may operate in accordance with otherwireless protocols in other embodiments.

The computing device 1400 may include a plurality of communication chips1406. For instance, a first communication chip 1406 may be dedicated toshorter range wireless communications such as Wi-Fi and Bluetooth and asecond communication chip 1406 may be dedicated to longer range wirelesscommunications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, andothers.

The processor 1404 of the computing device 1400 may include a die (e.g.,a first die 102 or a second die 102 of FIG. 1 or 2) in an IC packageassembly (e.g., IC package assembly 100 of FIG. 1 or 2) as describedherein. The term “processor” may refer to any device or portion of adevice that processes electronic data from registers and/or memory totransform that electronic data into other electronic data that may bestored in registers and/or memory.

The communication chip 1406 may also include a die (e.g., a first die102 or a second die 102 of FIG. 1 or 2) in an IC package assembly (e.g.,IC package assembly 100 of FIG. 1 or 2) as described herein. In furtherimplementations, another component (e.g., memory device or otherintegrated circuit device) housed within the computing device 1400 maycontain a die (e.g., first die 102 or second die 102 of FIG. 1 or 2) inan IC package assembly (e.g., IC package assembly 100 of FIG. 1 or 2) asdescribed herein.

The computing device 1400 may be configured to execute instructionsstored on a storage medium described herein to perform various actions.In various implementations, the computing device 1400 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 1400 may be any other electronic device that processes data.

Embodiments of the present disclosure may provide IC packages withimproved performance, lower cost and/or reduced size (e.g., for smallerform factors). Techniques and configurations in accordance withembodiments described herein may be applied to CPU's/processors,chipsets, graphics devices, wireless devices, and/or multi-chip/3Dpackages that include a CPU in combination with one or more otherdevices. As compared to prior techniques and configurations, embodimentsdisclosed herein may provide higher via density between chips/dies,higher routing density between chips/dies, and/or improved component(chip/die) to component (chip/die) alignment (e.g., from standarddeviation of 15 μm to less than 5 μm, or from standard deviation of 15μm to around 2 μm).

The above description of illustrated implementations of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific implementations of, and examples for, the invention aredescribed herein for illustrative purposes, various equivalentmodifications are possible within the scope of the invention, as thoseskilled in the relevant art will recognize.

These modifications may be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of theinvention is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

1. (canceled)
 2. A system to couple a first component for asemiconductor package to a second component for the semiconductorpackage, comprising: a first support to couple to the first component; asecond support to: couple to the second component; and exert a force onthe second component, wherein the force causes the second component tobe pressed against the first component; and a heat element to apply heatto at least one of the first component and the second component whilethe force is exerted on the second component, wherein the firstcomponent and the second component are to become bonded.
 3. The systemof claim 2, wherein at least part of the second support is porous. 4.The system of claim 3, further comprising a chucking system, thechucking system to apply a vacuum to the second support to produce thevacuum pressure.
 5. The system of claim 2, wherein the second supportincludes a chuck.
 6. The system of claim 2, wherein the first supportand the second support are to align the first component and the secondcomponent.
 7. The system of claim 2, wherein the first support is tocouple to the first component via vacuum pressure, and wherein thesecond support is to couple to the second component via vacuum pressure.8. The system of claim 2, wherein the first component and the secondcomponent are bonded via the force and the heat.
 9. The system of claim2, wherein the second component comprises a die.
 10. The system of claim2, wherein the first component and the second component comprisesemiconductor components.
 11. The system of claim 2, wherein: the firstsupport is further to decouple from the first component after the secondcomponent is bonded to the first component; and the second support isfurther to decouple from the second component after the second componentis bonded to the first component.
 12. A method of coupling a firstcomponent for a semiconductor package to a second component for thesemiconductor package, comprising: coupling the first component to afirst support; coupling the second component to a second support;exerting a force on the second component causing the second component tobe pressed against the first component; and applying heat to at leastone of the first component and the second component while exerting theforce on the second component, wherein the first component and thesecond component are to become bonded.
 13. The method of claim 12,further comprising inverting the second support, wherein the force isexerted on the second component while the second support is inverted.14. The method of claim 12, further comprising: removing the force aftera predetermined period of time; and halting application of the heatafter the predetermined period of time.
 15. The method of claim 14,wherein the predetermined period of time is at least 100 seconds. 16.The method of 12, further comprising aligning the first component withthe second component, the first component and the second component beingaligned while exerting the force on the second component.
 17. The methodof claim 12, wherein the force is between 0.01 atmospheres and 11atmospheres.
 18. The method of claim 12, wherein coupling the firstcomponent to the first support includes applying vacuum pressure to thefirst component, and wherein coupling the second component to the secondsupport includes applying vacuum pressure to the second component. 19.The method of claim 12, wherein the first component and the secondcomponent become bonded in response to exerting the force and applyingthe heat.
 20. The method of claim 12, further comprising electricallycoupling an interface structure of the second component with a portionof the first component.
 21. The method of claim 20, wherein theinterface structure is electrically coupled with the portion of thefirst component when the first component and the second component arebonded.